'Stress Tests' Probe Nanoscale Strains In Materials

Researchers have demonstrated their ability to measure relatively low levels of stress or strain in regions of a semiconductor device as small as 10nm across. Their recent results not only will impact the design of future generations of integrated circuits but also lay to rest a long-standing disagreement in results between two different methods for measuring stress in semiconductors.

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[Source: ScienceDaily: Latest Science News - Posted by FreeAutoBlogger]